PDTC123YE,115 Tech -specificaties
NXP Semiconductors / Freescale - PDTC123YE,115 Technische specificaties, attributen, parameters en onderdelen met vergelijkbare specificaties als NXP Semiconductors / Freescale - PDTC123YE,115
Productkenmerk | Attribuutwaarde | |
---|---|---|
Fabrikant | NXP Semiconductors | |
Spanning - Collector Emitter Breakdown (Max) | 50V | |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | |
transistor Type | NPN - Pre-Biased | |
Leverancier Device Pakket | SC-75 | |
Serie | - | |
Weerstand - emitterbasis (R2) | 10 kOhms | |
Weerstand - basis (R1) | 2.2 kOhms | |
Vermogen - Max | 150mW | |
Packaging | Tape & Reel (TR) |
Productkenmerk | Attribuutwaarde | |
---|---|---|
Verpakking / doos | SC-75, SOT-416 | |
Andere namen | 934058807115 PDTC123YE T/R PDTC123YE T/R-ND |
|
montage Type | Surface Mount | |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) | |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant | |
gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75 | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V | |
Current - Collector Cutoff (Max) | 1µA | |
Current - Collector (Ic) (Max) | 100mA | |
Base Part Number | PDTC123 |
De drie delen aan de rechterkant hebben vergelijkbare specificaties als NXP Semiconductors / Freescale PDTC123YE,115.
Productkenmerk | ||||
---|---|---|---|---|
Onderdeel nummer | PDTC123YE,115 | PDTC123TU115 | PDTC123TT,215 | PDTC123TT,215 |
Fabrikant | NXP Semiconductors / Freescale | NXP Semiconductors | NXP USA Inc. | Nexperia USA Inc. |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V | - | 30 @ 20mA, 5V | 30 @ 20mA, 5V |
montage Type | Surface Mount | - | Surface Mount | Surface Mount |
Current - Collector (Ic) (Max) | 100mA | - | 100 mA | 100 mA |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant | - | - | - |
Serie | - | * | - | - |
Andere namen | 934058807115 PDTC123YE T/R PDTC123YE T/R-ND |
- | - | - |
gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75 | - | - | - |
Weerstand - emitterbasis (R2) | 10 kOhms | - | - | - |
Leverancier Device Pakket | SC-75 | - | SOT-23 | TO-236AB |
Spanning - Collector Emitter Breakdown (Max) | 50V | - | 50 V | 50 V |
Packaging | Tape & Reel (TR) | - | - | - |
Current - Collector Cutoff (Max) | 1µA | - | 1µA | 1µA |
Weerstand - basis (R1) | 2.2 kOhms | - | 2.2 kOhms | 2.2 kOhms |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) | - | - | - |
transistor Type | NPN - Pre-Biased | - | NPN - Pre-Biased | NPN - Pre-Biased |
Base Part Number | PDTC123 | - | - | - |
Vermogen - Max | 150mW | - | 250 mW | 250 mW |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | - | 150mV @ 500µA, 10mA | 150mV @ 500µA, 10mA |
Verpakking / doos | SC-75, SOT-416 | - | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Download PDTC123YE,115 PDF -datasheets en NXP Semiconductors / Freescale -documentatie voor PDTC123YE,115 - NXP Semiconductors / Freescale.
Gemeenschappelijke landen logistieke tijdreferentie | ||
---|---|---|
Regio | Land | Logistische tijd (dag) |
Amerika | Verenigde Staten | 5 |
Brazilië | 7 | |
Europa | Duitsland | 5 |
Verenigd Koninkrijk | 4 | |
Italië | 5 | |
Oceanië | Australië | 6 |
Nieuw-Zeeland | 5 | |
Azië | India | 4 |
Japan | 4 | |
Midden-Oosten | Israël | 6 |
DHL & FedEx Verzendkosten Referentie | |
---|---|
Verzendkosten (kg) | Referentie DHL (USD $) |
0.00kg-1.00kg | USD$30.00 - USD$60.00 |
1.00kg-2.00kg | USD$40.00 - USD$80.00 |
2.00kg-3.00kg | USD$50.00 - USD$100.00 |
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